tsop2-44

S6L4016W1M-UI55 4Mb异步低功耗SRAM

  • 从 45ns 开始的快速访问时间
  • 低功耗 CMOS 典型值 2μA 待机电流
  • 完全静态操作 - 无需时钟或刷新
  • 三态输出
  • 工业温度范围
  • 宽电源电压
分类： ,

技术规格

访问时间 Access Time 55ns
内存大小 Memory Size 4Mbit
组织 Organisation 256K x 16
电源电压 Supply Voltage 2.3~3.6V
访问时间 Access Time 45/55/70ns

详细描述

Netsol 低功耗 SRAM 使用基于六晶体管单元设计的先进 CMOS 工艺制造。该技术特别适用于电池备份应用，因为数据保持电流非常低。

Netsol 承诺长期供应，这对于设计周期长的工业和专业产品来说通常是一个问题。

The Netsol Low Power SRAM is fabricated using advanced CMOS process based on a six-transistor cell design. This technology is particularly well suited for use in battery backup applications as the data retention current is very low.

Netsol have a commitment to long term supply which is often an issue for industrial and professional products with a long design cycle.

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